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2STA1695
High power PNP epitaxial planar bipolar transistor
General features

Preliminary data
High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applications
Audio power amplifier TO-3P
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STA1695 Marking 2STA1695 Package TO-3P Packaging Tube
June 2007
Rev 1
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
2STA1695
Electrical ratings
Table 1.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value -140 -140 -6 -10 -20 100 -65 to 150 150 Unit V V V A A W C C
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ________________max Value 1.25 Unit C/W
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2STA1695
Electrical characteristics
1
Electrical characteristics
(TCASE = 25C; unless otherwise specified)
Table 3.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = -140V VEB = -6V IC = -50mA IC = -100A IE = -1mA IC = -5A IC = -7A VCE = -5V IC = -3A IC = -5A IC = -0.5A IE = 0 IC = -5A IB = -500mA IB = -700mA IC = -5A V CE = -4V V CE = -4V V CE = -12V 70 50 20 225 MHz pF s s s -140 -140 -6 -0.5 -0.7 -1.3 140 Min. Typ. Max. -0.1 -0.1 Unit A A V V V V V V
Collector-emitter breakdown V(BR)CEO(1) voltage (I = 0) B V(BR)CBO Collector-emitter breakdown voltage (IE = 0)
Collector-emitter breakdown V(BR)EBO(1) voltage (I = 0) C VCE(sat) (1) VBE (1) hFE fT CCBO ton tstg toff Collector-emitter saturation voltage Base-emitter voltage DC current gain Transition frequency Collector-base capacitance Resistive load Turn-on time Storage time Fall time
VCB = -10V f = 1MHz V CC = -60V
0.24 1.2 0.24
IB1 = -IB2 = -0.5A
Note: 1 Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
2STA1695
1.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Output characteristics
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter on voltage
Figure 6.
Collector current vs baseemitter voltage
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2STA1695
Electrical characteristics
1.2
Figure 7.
Test circuit
Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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Package mechanical data
2STA1695
2
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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2STA1695
Package mechanical data
TO-3P Mechanical Data
DIM. A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 L2 P Q Q1 MIN. 4.6 1.45 1.20 0.80 1.80 2.80 0.55 19.70 15.40 13.60 9.60 5.45 20 3.50 18.40 5 3.80 mm. TYP 1.50 1.40 1 MAX. 5 1.65 1.60 1.20 2.20 3.20 0.75 20.10 15.80
0.60 19.90 13.90
5.15 19.50 18.20 3.10
5.75 20.50 18.60 3.30
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Revision history
2STA1695
3
Revision history
Table 4.
Date 18-May-2007
Revision history
Revision 1 Initial release Changes
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2STA1695
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